Equipment

Electron beam lithography

Custom RAITH eLine Plus system. On top of the standard electron beam functionality, we also have nanomanipulators, and gas injection system direct write capabilities.

  • Maximum substrate / wafer size of 100 mm
  • Thermal field emission gun with variable tension up to 30 keV
  • Minimum spot size < 10 nm
  • Gas injection system
  • Nanomanipulators
  • Extra wide field of 1.3 mm at both 50 and 100 keV
  • Laser interferometer stage with 0.62 nm resolution
  • 50 MHz pattern generator
  • Manual and automatic alignment
  • Load lock for faster sample throughput

Evaporation of metals and dielectrics

Several evaporators for metals and organics.

Electron beam

  • Four crucibles with Ni, Cr, NiCr, Au, Ti, Au, Ag metals, SiO2, MgF2 dielectrics
  • Sample size up to 100 mm
  • 10 kW electron beam source
  • Highly directional source
  • Substrate rotation for more even sample coating

Thermal evaporation

  • Four evaporate slots including Al, Au, and Ag metals
  • Sample size up to 100 mm
  • Substrate rotation for more even sample coating

Dry etching

Custom built reactive ion etcher

  • Etching power up to 200 W
  • Sample size up to 100 mm
  • SF6, N2, Ar, He, and O2 etch gasses
  • Si and SOI substrate materials

SEM

Hitachi SEM

  • Etching power up to 200 W
  • Sample size up to 100 mm
  • SF6, N2, Ar, He, and O2 etch gasses
  • Si and SOI substrate materials

Optical lithography

INSERT NAME optical mask aligner

  • Flood exposure and micron sized features
  • Sample size up to 100 mm
  • WHATEVER THE POWER IS UV source